Founder of the company on December 28, 2006 officially launched a new generation of proprietary N-channel MOSFET-TS75NF75, it adopts the international advanced level of 0.25umDMOS process.
TS75NF75 has excellent thermal resistance (0.9 ℃/ W) and low RDS (ON) (40A when 10mΩ), rated voltage of 75V, rated current of 75A, the conventional shape for the TO-220 package and DPAK, SGS and meet EU RoHS standards, can completely replace the IR, ST and other similar foreign products.
TS75NF75 low on-resistance with fast switching and low gate charge characteristics combine to properly handle high drain current, low loss characteristics help optimize its output efficiency, efficient operation of a single tube provides maximum power, ideally suited for efficient switching power supply. Because the device of the gate drive requirements are lower, so the higher the load power applications, the use of FETs provided in parallel can achieve over 90% efficiency is ideal electric vehicle controller key device. |
